Method for forming plug of semiconductor device

专利摘要:
To a method of forming a plug of a semiconductor element, and more particularly to a method of forming a plug of a semiconductor element suitable for forming a highly reliable plug. A method for forming a plug of a semiconductor device includes sequentially forming an insulating layer and a buffer layer on a semiconductor substrate, sequentially etching the buffer layer and the insulating layer to form a contact hole, forming a conductive layer on the entire surface of the substrate including the buffer layer Forming a plug by selectively allowing the conductive layer to remain only in the contact hole, and removing the buffer layer.
公开号:KR19990030785A
申请号:KR1019970051201
申请日:1997-10-06
公开日:1999-05-06
发明作者:지승헌
申请人:구본준；엘지반도체 주식회사；
IPC主号:

专利说明:

Method for forming plug of semiconductor device
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a plug of a semiconductor element, and more particularly to a method of forming a plug of a semiconductor element suitable for forming a reliable plug.
Hereinafter, a method of forming a plug of a conventional semiconductor device will be described with reference to the accompanying drawings.
1A to 1E are cross-sectional views of a plug forming process of a conventional semiconductor device.
First, as shown in FIG. 1A, an oxide film 2 is formed on a semiconductor substrate 1.
1B, a photoresist layer PR is applied on the oxide layer 2, a region where a contact hole is to be formed in an exposure and development process is defined, and then the photoresist layer PR of the region in which the contact hole is to be formed is removed As desired.
As shown in FIG. 1C, the oxide film 2 is selectively removed by an etching process using the patterned photoresist PR as a mask, thereby forming a contact hole 3.
A polysilicon layer 4 is formed on the oxide film 2 including the contact hole 3 as shown in FIG.
The polysilicon layer 4 is etched back to form the poly-plug 4a in the contact hole 3, as shown in FIG. At this time, when the oxide film 2 on the side of the contact hole 3 is exposed, the etching back process is stopped.
Conventionally, in the conventional method of forming a plug of a semiconductor device, it is difficult to easily detect the step of exposing the side of the oxide film in the contact hole in the process of forming the polysilicon layer on the oxide film including the contact hole, and then, (LOSS) of the poly-plug in the contact hole due to the loaimg effect occurs, which makes it difficult to provide a plug with high reliability.
In order to solve the problems of the plug forming method as described above, the present invention has been devised in order to solve the problems of the above-mentioned plug forming method, in which a buffer insulating film is formed on an oxide film on which a contact hole is formed, And it is an object of the present invention to provide a method of forming a plug of a semiconductor device which improves reliability without difficulty in forming.
1A to 1E are cross-sectional views of a conventional semiconductor device plug forming process
2A to 2F are cross-sectional views of a plug forming process of a semiconductor device of the present invention
DESCRIPTION OF THE REFERENCE NUMERALS
11: semiconductor substrate 12: insulating film
13: buffer layer 14: contact hole
15a: Plug
A method for forming a plug of a semiconductor device according to the present invention includes the steps of sequentially forming an insulating layer and a buffer layer on a semiconductor substrate, forming a contact hole by sequentially etching the buffer layer and the insulating layer, forming a conductive layer on the entire surface of the substrate including the buffer layer Forming a plug by selectively allowing the conductive layer to remain only in the contact hole, and removing the buffer layer.
Such a method of forming a plug of a semiconductor element of the present invention will be described with reference to the accompanying drawings.
2A to 2F are sectional views of a plug forming process of a semiconductor device of the present invention.
First, as shown in FIG. 2A, an insulating film 12 and a buffer layer 13 are sequentially formed on a semiconductor substrate 11. At this time, the insulating layer 12 is formed of an oxide layer or a nitride layer, and the buffer layer 13 is formed using an anti-reflection layer, preferably SiO _x N _y . That is, the buffer layer 13 is formed of SiO _x N _{y that} is insulating and can prevent reflection of light when forming the buffer layer 13.
As shown in FIG. 2B, a photosensitive film PR is applied on the buffer layer 13 and then a region for forming a contact hole is defined in the exposure and development processes to remove the photosensitive film PR in a region where a contact hole is to be formed As desired.
2C, the buffer layer 13 and the insulating layer 12 are selectively removed by an etching process using the patterned photoresist PR as a mask to form a contact hole 14. [
A conductive layer 15 is formed on the buffer layer 13 including the contact hole 14, as shown in FIG. 2D. At this time, polysilicon or tungsten is used. A barrier metal layer such as titanium or a titanium nitride film may be formed between the conductive layer 15 and the semiconductor substrate 11.
The conductive layer 15 is etched back to form a plug 15a in the contact hole 14, as shown in FIG. 2E. At this time, if the interface between the buffer layer 13 and the insulating layer 12 is exposed, the etcher back process is stopped. That is, it is possible to solve the problem that under-etching can occur due to the loading effect in which the etch rate is different in the portion where the pattern density between the edge portion and the center portion of the wafer is abruptly changed.
As shown in FIG. 2F, the buffer layer 13 is removed.
In the method of forming a plug of a semiconductor device according to the present invention, a buffer layer is formed on an insulating film in a step of forming a plug in a contact hole of an insulating film to prevent a loading effect that may occur as the semiconductor device is highly integrated, It is possible to prevent the problem of loss of the plug and to provide a plug of a highly reliable semiconductor element.

权利要求:
Claims (3)
[1" claim-type="Currently amended] Sequentially forming an insulating film and a buffer layer on a semiconductor substrate;
Forming a contact hole by sequentially etching the buffer layer and the insulating film;
Forming a conductive layer on the entire surface of the substrate including the buffer layer;
Selectively plugging the conductive layer to remain in the contact hole to form a plug;
And removing the buffer layer after the step of forming the plug.
[2" claim-type="Currently amended] The method of claim 1, wherein the buffer layer is formed of semiconductor elements for the plug method is characterized by forming a SiO _X N _Y with the anti-reflection effect.
[3" claim-type="Currently amended] The method for forming a plug of a semiconductor device according to claim 1, wherein the conductive layer is removed until the interface between the buffer layer and the insulating layer is exposed when the conductive layer is removed.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1997-10-06|Application filed by 구본준, 엘지반도체 주식회사

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1997-10-06|Priority to KR1019970051201A

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1999-05-06|Publication of KR19990030785A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019970051201A|KR19990030785A|1997-10-06|1997-10-06|Method for forming plug of semiconductor device|